elektronische bauelemente SSI2007 n-ch: 0.8a, 20v, rds(on) 260 m p-ch: -0.56a, -20v, rds(on) 800 m n & p-ch enhancement mode power mosfet 17-dec-2013 rev. a page 1 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen & lead-free descriptions the SSI2007 is n and p channel enhancement mos fiel d effect transistor. uses advanced trench technology and design to provide excellent rds (on)with low gate c harge. this device is suitable for use in dc-dc conversion , load switch and level shift. mechanical data trench technology supper high density cell design excellent on resistance extremely low threshold voltage application dc-dc converter circuit load switch device marking: package information package mpq leader size sot-563 3k 7 inch maximum ratings (t a = 25c unless otherwise specified) part number n-channel p-channel parameter symbol 10s steady state 10s steady state unit drain C source voltage v ds 20 -20 v gate C source voltage v gs 6 v t a = 25c 0.88 0.8 -0.64 -0.56 continuous drain current 1 t a = 70c i d 0.71 0.64 -0.51 -0.45 a t a = 25c 0.37 0.3 0.37 0.29 power dissipation 1 t a = 70c p d 0.23 0.19 0.23 0.18 w t a = 25c 0.76 0.69 -0.54 -0.5 continuous drain current 2 t a = 70c i d 0.6 0.55 -0.43 -0.4 a t a = 25c 0.27 0.22 0.27 0.22 power dissipation 2 t a = 70c p d 0.17 0.14 0.17 0.14 w pulsed drain current 3 i dm 1.4 -1 a maximum junction-to-lead r jl 260 c / w operating junction & storage temperature range t j , t stg 150, -55~150 c sot-563 07* e f j b c d g a h millimeter millimeter ref. min. max. ref. min. max. a 1.50 1.70 f 0.09 0.16 b 1.50 1.70 g 0.45 0.55 c 0.525 0.60 h 0.17 0.27 d 1.10 1.30 j 0.10 0.30 e - 0.05 date code top view
elektronische bauelemente SSI2007 n-ch: 0.8a, 20v, rds(on) 260 m p-ch: -0.56a, -20v, rds(on) 800 m n & p-ch enhancement mode power mosfet 17-dec-2013 rev. a page 2 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. thermal resistance ratings note: 1. surface mounted on fr4 board using 1 square inch pad size, 1oz copper. 2. surface mounted on fr4 board using minimum pad s ize, 1oz copper 3. repetitive rating, pulse width limited by juncti on temperature, tp=10 s, duty cycle=1% 4. repetitive rating, pulse width limited by juncti on temperature tj=150c. electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static n-ch 20 - - v gs =0, i d =250 a drain-source breakdown voltage p-ch v (br)dss -20 - - v v gs =0, i d =-250 a n-ch - - 100 v ds =20v, v gs =0 zero gate voltage drain current p-ch i dss - - -100 na v ds = -20v, v gs =0 n-ch - - 5 gate-source leakage p-ch i gss - - 5 a v ds =0 , v gs = 5v n-ch 0.45 0.58 0.85 v ds =v gs, i d =250 a gate-threshold voltage p-ch v gs(th) -0.45 -0.55 -0.8 v v ds =v gs, i d = -250 a n-ch - 220 260 v gs =4.5v, i d =0.55a p-ch - 600 800 v gs = -4.5v, i d = -0.45a n-ch - 260 310 v gs =2.5v, i d =0.45a p-ch - 780 1000 v gs = -2.5v, i d = -0.35a n-ch - 320 380 v gs =1.8v, i d =0.35a drain-source on resistance p-ch r ds(on) - 960 1250 m v gs = -1.8v, i d = -0.25a n-ch - 2 - v ds =5v, i d = 0.55a forward transconductance p-ch g fs - 1.25 - s v ds = -5v, i d = -0.45a body-drain diode ratings n-ch 0.5 0.7 1.1 i s =150ma, v gs =0 diode forward onCvoltage p-ch v sd -0.5 -0.65 -1.1 v i s = -150ma, v gs =0 part number n-channel p-channel parameter symbol typ. max. typ. max. unit t Q 10s 285 335 290 335 junction-to-ambient thermal resistance 1 steady state r ja 340 405 350 430 t Q 10s 385 450 385 460 junction-to-ambient thermal resistance 2 steady state r ja 455 545 465 555 junction-to-case thermal resistance steady state r jc 260 300 280 320 c / w
elektronische bauelemente SSI2007 n-ch: 0.8a, 20v, rds(on) 260 m p-ch: -0.56a, -20v, rds(on) 800 m n & p-ch enhancement mode power mosfet 17-dec-2013 rev. a page 3 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions dynamic characteristics n-ch - 50 - input capacitance p-ch c iss - 74.5 - n-ch - 13 - output capacitance p-ch c oss - 10.8 - n-ch - 8 - reverse transfer capacitance p-ch c rss - 10.2 - pf n-ch: v ds =10v, v gs =0, f=1mhz p-ch: v ds = -10v, v gs =0, f=100khz n-ch - 1.15 - total gate charge p-ch q g(tot) - 1.1 - n-ch - 0.06 - threshold gate charge p-ch q g(th) - 0.08 - n-ch - 0.15 - gate-to-source charge p-ch q gs - 0.44 - n-ch - 0.23 - gate-to-drain charge p-ch q gd - 0.18 - nc n-ch: v ds =10v, v gs =4.5v, i d =0.6a p-ch: v ds = -10v, v gs = -4.5v, i d = -0.6a n-ch - 22 - turn-on delay time p-ch t d(on) - 45 - n-ch - 80 - rise time p-ch t r - 140 - n-ch - 700 - turn-off delay time p-ch t d(off) - 1500 - n-ch - 380 - fall time p-ch t f - 2100 - ns n-ch: v dd =10v, i d =0.5a, v gen =4.5v, r l =10 , r g =6 . p-ch: v dd = -10v, i d = -0.5a, v gen = -4.5v, r l =10 , r g =6 .
elektronische bauelemente SSI2007 n-ch: 0.8a, 20v, rds(on) 260 m p-ch: -0.56a, -20v, rds(on) 800 m n & p-ch enhancement mode power mosfet 17-dec-2013 rev. a page 4 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves (n-channel)
elektronische bauelemente SSI2007 n-ch: 0.8a, 20v, rds(on) 260 m p-ch: -0.56a, -20v, rds(on) 800 m n & p-ch enhancement mode power mosfet 17-dec-2013 rev. a page 5 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves (n-channel)
elektronische bauelemente SSI2007 n-ch: 0.8a, 20v, rds(on) 260 m p-ch: -0.56a, -20v, rds(on) 800 m n & p-ch enhancement mode power mosfet 17-dec-2013 rev. a page 6 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves(p-channel)
elektronische bauelemente SSI2007 n-ch: 0.8a, 20v, rds(on) 260 m p-ch: -0.56a, -20v, rds(on) 800 m n & p-ch enhancement mode power mosfet 17-dec-2013 rev. a page 7 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves(p-channel)
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